? 2007 ixys all rights reserved 1 - 4 vum 24-05n 20070605c ixys reserves the right to change limits, test conditions and dimensions i d25 =35a v dss = 500 v r ds(on) = 0.12 module for power factor correction features ? package with dcb ceramic base plate ? soldering connections for pcb mounting ? isolation voltage 3600 v~ ? low r ds(on) hdmos tm process ? low package inductance for high speed switching ? ultrafast boost diode ? kelvin source for easy drive applications ? power factor pre-conditioner for smps, ups, battery chargers and inverters ? boost topology for smps including 1~ rectifier bridge ? power supply for welding equipment advantages ? 3 functions in one package ? output power up to 5 kw ? no external isolation ? easy to mount with two screws ? suitable for wave soldering ? high temperature and power cycling capability ? fits easiliy to all available pfc controller ics v rrm (diode) v dss type vv 600 500 vum 24-05n power mosfet stage for boost converters 513278 46 symbol conditions maximum ratings v dss t vj = 25c to 150c 500 v v dgr t vj = 25c to 150c; r gs = 10 k 500 v v gs continuous 20 v i d t s = 85c 24 a i d t s = 25c 35 a i dm t s = 25c, t p = 95 a p d t s = 85c 170 w i s v gs = 0 v, t s = 25c 24 a i sm v gs = 0 v, t s = 25c, t p = 95 a v rrm 600 v i dav t s = 85c, rectangular = 0.5 40 a i fsm t vj = 45c, t = 10 ms (50 hz) 300 a t = 8.3 ms (60 hz) 320 a t vj = 150c, t = 10 ms (50 hz) 260 a t = 8.3 ms (60 hz) 280 a p t s = 85c 36 w v rrm 800 v i dav t s = 85c, sinus 180 40 a i fsm t vj = 45c, t = 10 ms (50 hz) 300 a t = 8.3 ms (60 hz) 320 a t vj = 150c, t = 10 ms (50 hz) 260 a t = 8.3 ms (60 hz) 280 a p t s = 85c 33 w t vj -40...+150 c t jm 150 c t stg -40...+150 c v isol 50/60 hz t = 1 min 3000 v~ i isol 1 ma t = 1 s 3600 v~ m d mounting torque (m5) 2-2.5/18-22 nm/lb.in. weight 28 g mosfet boost diode module rectifier diodes pulse width limited by t vj 5 7 6 8 3 2 4 1
? 2007 ixys all rights reserved 2 - 4 vum 24-05n 20070605c ixys reserves the right to change limits, test conditions and dimensions symbol conditions characteristic values (t vj = 25c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 2 ma 500 v v gs(th) v ds = 20 v, i d = 20 ma 2 5 v i gss v gs = 20 v, v ds = 0 v 500 na i dss v ds = 500 v, v gs = 0 v 2 ma r ds(on) t vj = 25c 0.12 r gint t vj = 25c 1.5 g fs v ds = 15 v, i ds = 12 a 30 s v ds i ds = 24 a, v gs = 0 v 1.5 v t d(on) 100 ns t d(off) 220 ns c iss 8.5 nf c oss 0.9 nf c rss 0.3 nf q g v ds = 250 v, i d = 12 a, v gs = 10 v 350 nc r thjh with heat transfer paste 0.38 k/w v f i f = 22 a; t vj = 25c 1.65 v t vj =150c 1.4 v i r v r = 600 v, t vj = 25c 1.5 ma v r = 480 v, t vj = 25c 0.25 ma t vj =125c 7 ma v t0 for power-loss calculations only 1.14 v r t t vj = 125c 10 m i rm i f = 30 a; -di f /dt = 240 a/ s v r = 350 v, t vj = 100c 10 11 a r thjh with heat transfer paste 1.8 k/w v f i f = 20 a, t vj = 25c 1.4 v t vj =125c 1.4 v i r v r = 800 v t vj = 25c 0.25 ma v r = 640 v, t vj =125c 2 ma v t0 for power-loss calculations only 1.05 v r t t vj = 125c 16 m r thjh with heat transfer paste 2 k/w v ds = 250 v, i ds = 12 a, v gs = 10 v zgen. = 1 , l-load v ds = 25 v, f = 1 mhz, v gs = 0 v rectifier diodes boost diode mosfet fig. 1 non-repetitive peak surge current (rectifier diodes) fig. 2 i 2 t for fusing (rectifier diodes) dimensions in mm (1 mm = 0.0394") t i 2 t a 2 s a i fsm 0.001 0.01 0.1 1 0 50 100 150 200 250 300 350 110 0 100 200 300 400 500 s ms t v r = 0.8v rrm t vj = 45 c t vj = 125 c t vj = 45 c t vj = 125 c
? 2007 ixys all rights reserved 3 - 4 vum 24-05n 20070605c ixys reserves the right to change limits, test conditions and dimensions 234567 0 10 20 30 40 50 60 70 80 -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 s g fs 0 20406080100 0 20 40 60 80 0.51.01.52.02.5 0 20 40 60 80 100 120 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 0.1 1 10 100 0 100 200 300 400 0 2 4 6 8 10 12 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 a/ s v ds v c nf nc c bv dss t vj norm. c v gs q g v norm. v gs(th) t v j r ds(on) 0246810 0 10 20 30 40 50 60 70 80 i d v ds v a v gs i d v a v f a t vj = 25 c t vj = 125 c -di f /dt v c v gs = 5 v 6 v 10 v 7 v i d =18a v dss v gs(th) v ds = 250 v i d = 18 a i g = 10 ma c iss c oss c rss q rr t vj =150 c t vj =100 c t vj = 25 c i f = 37 a i f = 74 a i f = 37 a i f = 18.5 a i f a i d typ. max. t v j =100 c v r = 350 v fig. 3 typ. output characteristic fig. 4 typ. transfer characteristics fig. 5 typ. normalized i d = f (v ds ) (mosfet) i d = f (v gs ) (mosfet) r ds(on) = f (t vj ) (mosfet) fig. 6 typ. normalized bv dss = f (t vj ) fig. 7 typ. turn-on gate charge fig. 8 typ. capacitances c = f (v ds ), v gs(th) = f (t vj ) (mosfet) characteristics, v gs = f (q g ) (mosfet) f = 1 mhz (mosfet) fig. 9 typ. transconductance, fig. 10 forward current versus fig. 11 recovery charge versus -di f /dt g fs = f (i d ) (mosfet) voltage drop (boost diode) (boost diode)
? 2007 ixys all rights reserved 4 - 4 vum 24-05n 20070605c ixys reserves the right to change limits, test conditions and dimensions 0 50 100 150 200 250 0 1 2 3 4 5 6 7 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 0 20406080100120 0 1 2 3 4 5 6 7 8 0 100 200 300 400 500 600 0.0 0.1 0.2 0.3 0.4 0.5 0.6 40 60 80 100 120 0 1 2 3 4 5 6 0 100 200 300 400 500 600 0 10 20 30 40 50 kw p out z thjc k/w t -di f /dt t s c p out kw 0 100 200 300 400 500 600 2 4 6 8 10 12 14 16 18 0.1 0.3 0.5 0.7 0.9 v fr s -di f /dt i rm a 20 40 60 80 100 120 140 160 0.4 0.6 0.8 1.0 1.2 1.4 t j k t v in = 230 v/50 hz t s =85c v in = 115 v/60 hz p out v in (rms) kw t s =85c f c = 40 khz f c = 80 khz v f c = 80 khz v in = 230 v/50 hz v in = 115 v/60 hz c a/ s a/ s rectifier diodes boost diode mosfet i f = 37 a i f = 74 a i f = 37 a i f = 18.5 a typ. max. i rm q r i f = 37 a i f = 74 a i f = 37 a i f = 18.5 a typ. max. v f c di f /dt khz a/ s s v fr t fr t fr s t rr t v j =100 c v r = 350 v t v j =100 c v r = 350 v vum 24 fig. 12 peak reverse current versus fig. 13 dynamic parameters versus fig. 14 recovery time versus -di f /dt (boost diode) junction temperature (boost diode) -di f /dt (boost diode) fig. 15 peak forward voltage versus fig. 16 output power versus carrier fig. 17 output power versus -di f /dt (boost diode) frequency (module) mains voltage fig. 18 output power versus fig. 19 transient thermal impedance junction to case for all devices heatsink temperature (module) t vj
|
